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TC518128BPL-10V Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC518128BPL-10V datasheet PDF. This datasheet also includes the TC518128BPL-70V variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC518128BPL-70V-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

The TC518128B-Voperates from a single power supply of 2.7 - 5.5V.

Overview

TOSHIBA SILICON GATE CMOS TC518l28BPL/BFL/BFWL/BFIL-70V/80V/lOV 131,072 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward t.

More Datasheets from Toshiba

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TC518128BPL-10 CMOS Pseudo Static RAM
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TC518128BPL-70 CMOS Pseudo Static RAM
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TC518128BPL-70V SILICON GATE CMOS PSEUDO STATIC RAM
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TC518128BPL-80V SILICON GATE CMOS PSEUDO STATIC RAM
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