TC518512FL-10LV Key Features
- Organization: 524,288 words x 8 bits
- Low voltage op
- Part: TC518512FL-10LV
- Manufacturer: Toshiba (official site)
- Size: 384.03 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| TC518512FL-10LT | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518512FL-10 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518512FL-10DR | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518512FL-70 | SILICON GATE CMOS PSEUDO STATIC RAM |
| TC518512FL-70DR | SILICON GATE CMOS PSEUDO STATIC RAM |
TC518512FL-10LV Description
The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed ar}QJow power storage. The TC518512PL-LVoperates from a single 3.0V - 5.5V power supply.