TC518512TRL-10 Datasheet (SILICON GATE CMOS PSEUDO STATIC RAM)

Part: TC518512TRL-10
Manufacturer: Toshiba (official site)
Size: 285.64 KB

TC518512TRL-10 Key Features

Organization: 524,288 words x 8 bits
Single 5V power supply
Fast access time
70 70ns 30ns 115ns 385mW
80 80ns 30ns 130ns 330mW 200fJA
10 100ns 40ns 160ns 275mW
Auto refresh is supported by an internal refresh address counter
Self refresh is supported by an internal timer
Inputs and outputs TIL patible
Refresh: 2048 refresh cycles/32ms

Related Toshiba Datasheets

Part Number	Description
TC518512TRL-10DR	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512TRL-10LT	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512TRL-10LV	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512TRL-70	SILICON GATE CMOS PSEUDO STATIC RAM
TC518512TRL-70DR	SILICON GATE CMOS PSEUDO STATIC RAM

TC518512TRL-10 Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .!:!!gh speed and low power storage. The TC518512PL operates from a single 5V power supply.