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TC518512TRL-10LT Datasheet SILICON GATE CMOS PSEUDO STATIC RAM

Manufacturer: Toshiba

Download the TC518512TRL-10LT datasheet PDF. This datasheet also includes the TC518512PL variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC518512PL-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

The TC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 words by 8 bits.

The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, .b!gh speed and low power storage.

The TC518512PL operates from a single 5V power supply.

Overview

rOSHIBA TC518512PL/FL/FIL/TRL-70(Ln/80(Ln /10(Ln SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC.

Key Features

  • a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RNV thus simplifying the microprocessor interface. The TC518512PL-(LT) is guaranteed over an operating temperature range of -20 - 7LfC. The TC518512PL is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastiC flat package, and a thin small outline package (forward type, reve.

More Datasheets from Toshiba

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