TC551001BPL-70 Datasheet PDF (SILICON GATE CMOS STATIC RAM)

TC551001BPL-70 - SILICON GATE CMOS STATIC RAM

Description

The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply.

Features

with an operating current of 5mNMHz (typ. ) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2jJA typically. The TC551 001 BPL has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC551 001 BPL is suitable for use in microprocessor systems where high speed, low power.

Datasheet Details

Part number	TC551001BPL-70
Manufacturer	Toshiba
File Size	262.62 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC551001BPL-70 Datasheet
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Full PDF Text Transcription

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TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mNMHz (typ.) and a minimum cycle time of 70ns. When CE1 is a logical high, or CE2 is low, the device is placed in a low power standby mode in which the standby current is 2jJA typically. The TC551 001 BPL has three control inputs. Chip enable inputs (CE1, CE2) allow for device selection and data retention control, while an output enable input (OE) provides fast memory access.

Published: Feb 20, 2017 |