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TC55257BFL-85LV, TC55257BFLLV Datasheet - Toshiba

TC55257BFL-85LV SILICON GATE CMOS STATIC RAM

TC55257BFL-85LV Features

* with an operating current of 5mNMHz fup.) and a minimum cycle time of 85ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J,lA at room tem- perature. The TC55257BPL has two control inputs. Chip enable (CE) allows for device selection and

TC55257BFLLV_ToshibaSemiconductor.pdf

This datasheet PDF includes multiple part numbers: TC55257BFL-85LV, TC55257BFLLV. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

TC55257BFL-85LV, TC55257BFLLV

Manufacturer:

Toshiba ↗

File Size:

272.29 KB

Description:

Silicon gate cmos static ram.

Note:

This datasheet PDF includes multiple part numbers: TC55257BFL-85LV, TC55257BFLLV.
Please refer to the document for exact specifications by model.

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TC55257BFL-85LV TC55257BFLLV SILICON GATE CMOS STATIC RAM Toshiba

TC55257BFL-85LV Distributor