TC55257BTRI-10L Datasheet PDF (SILICON GATE CMOS STATIC RAM)

TC55257BTRI-10L - SILICON GATE CMOS STATIC RAM

This page provides the datasheet information for the TC55257BTRI-10L, a member of the TC55257BPI-10L SILICON GATE CMOS STATIC RAM family.

Datasheet Summary

Description

The TC55257BPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply.

Features

with an operating current of 5mAlMHz fu:p. ) and a minimum cycle time of 100ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J. . tA at room tem- perature. The TC55257BPI has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access. The TC55257BPI is suitable for use in microprocessor systems where high speed, low power, and battery backup.

Datasheet Details

Part number	TC55257BTRI-10L
Manufacturer	Toshiba
File Size	221.32 KB
Description	SILICON GATE CMOS STATIC RAM
Datasheet	TC55257BTRI-10L Datasheet
Additional preview pages of the TC55257BTRI-10L datasheet.

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Full PDF Text Transcription

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TOSHIBA TC55257BPI/BFI/BSPI/BFTI/BTRI-IOL SILICON GATE CMOS 32,768 WORD x 8 BIT STATIC RAM Description The TC55257BPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circuit techniques provide both high speed and low power features with an operating current of 5mAlMHz fu:p.) and a minimum cycle time of 100ns. When CE is a logical high, the device is placed in a low power standby mode in which the standby current is 2J..tA at room tem- perature. The TC55257BPI has two control inputs. Chip enable (CE) allows for device selection and data retention control, while an output enable input (OE) provides fast memory access.

Published: Feb 19, 2017 |