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TC58256AFTI - CMOS NAND EPROM

TC58256AFTI Description

TC58256AFTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 256-MBIT (32M × 8 BITS) CMOS NAND E PROM .
The TC58256A is a single 3.

TC58256AFTI Features

* Organization Memory cell allay 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Mode control Serial input/output Command control
* Power supply VCC = 2.7

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CMOS NAND EPROM Toshiba
Toshiba TC58256AFTI-like datasheet