TC58BYG1S3HBAI4 - 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM

Name: TC58BYG1S3HBAI4
SKU: TC58BYG1S3HBAI4-947367

Toshiba

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Datasheet Details

Part number	TC58BYG1S3HBAI4
Manufacturer	Toshiba
File Size	2.44 MB
Description	2-GBIT (256M x 8 BIT) CMOS NAND E2PROM
Datasheet	TC58BYG1S3HBAI4-Toshiba.pdf

TC58BYG1S3HBAI4 Product details

Description

The TC58BYG1S3HBAI4 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.

Features

Organization x8 Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 2008 blocks Max 2048 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time Cell ar.

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Published: Oct 19, 2015 |