Datasheet Specifications
- Part number
- TC58BYG1S3HBAI6
- Manufacturer
- Toshiba ↗
- File Size
- 691.94 KB
- Datasheet
- TC58BYG1S3HBAI6-Toshiba.pdf
- Description
- 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM
Description
TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E2PROM .
Applications
* such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatiTC58BYG1S3HBAI6 Distributors
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