Datasheet Details
| Part number | TC58BYG2S0HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 357.49 KB |
| Description | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58BYG2S0HBAI6 Download (PDF)
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| Part number | TC58BYG2S0HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 357.49 KB |
| Description | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58BYG2S0HBAI6 Download (PDF)
|
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|
|
The TC58BYG2S0HBAI6 is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 2048blocks.
The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
TC58BYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND.
| Part Number | Description |
|---|---|
| TC58BYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58BYG0S3HBAI4 | 1-GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58BYG0S3HBAI6 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58BYG1S3HBAI4 | 2-GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58BYG1S3HBAI6 | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| TC58BVG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58BVG0S3HBAI6 | 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58BVG0S3HTA00 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58BVG0S3HTAI0 | 1 GBIT (128M x 8-BIT) CMOS NAND E2PROM |
| TC58BVG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |