Datasheet Details
| Part number | TC58DVG3S0ETA00 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 608.93 KB |
| Description | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58DVG3S0ETA00 Download (PDF)
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| Part number | TC58DVG3S0ETA00 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 608.93 KB |
| Description | 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58DVG3S0ETA00 Download (PDF)
|
|
|
|
The TC58DVG3S0E is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has two 4224-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4224-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
TOSHIBA CONFIDENTIAL TC58DVG3S0ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND.
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|---|---|
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