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Toshiba Electronic Components Datasheet

TC58FVM6T2AFT65 Datasheet

64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY

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TC58FVM6T2AFT65 pdf
TC58FVM6(T/B)2A(FT/XB)65
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64MBIT (8M × 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 8388608 words × 8 bits or as 4194304 words × 16 bits. The TC58FVM6T2A/B2A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The
TC58FVM6T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or
Erase operation.
FEATURES
Power supply voltage
Block erase architecture
VDD = 2.3 V~3.6 V
8 × 8 Kbytes/127 × 64 Kbytes
Operating temperature
Boot block architecture
Ta = −40°C~85°C
TC58FVM6T2A: top boot block
Organization
TC58FVM6B2A: bottom boot block
8M × 8 bits/4M × 16 bits
Mode control
Functions
Compatible with JEDEC standard commands
Simultaneous Read/Write
Page Read
Erase/Program cycles
105 cycles typ.
Auto Program, Auto Page Program
Access Time (Random/Page)
Auto Block Erase, Auto Chip Erase
Fast Program Mode/Acceleration Mode
VDD
CL = 30 pF
CL = 100 pF
Program Suspend/Resume
2.7~3.6 V
65 ns/25 ns
70 ns/30 ns
Erase Suspend/Resume
2.3~3.6 V
70 ns/30 ns
75 ns/35 ns
data polling/Toggle bit
block protection, boot block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
Power consumption
10 µA (Standby)
15 mA (Program/Erase operation)
55 mA (Random Read operation)
11 mA (Address Increment Read operation)
5 mA (Page Read operation)
Package
TC58FVM6**AFT:
TSOPI48-P-1220-0.50 (weight: 0.51 g)
TC58FVM6**AXB:
P-TFBGA56-0710-0.80AZ (weight: 0.125 g)
2003-01-29 1/61


Toshiba Electronic Components Datasheet

TC58FVM6T2AFT65 Datasheet

64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY

No Preview Available !

TC58FVM6T2AFT65 pdf
Ordering information
TC58FVM6(T/B)2A(FT/XB)65
TC58 F V M6 T2 A FT 65
Speed version
65 = 65 ns
Package
FT = TSOP
XB = FBGA
Design rule
A = 0.16 µm
Function/Boot block architecture/Bank ratio
T2 = Page mode/Top boot block/1:3:3:1
B2 = Page mode/Bottom boot block/1:3:3:1
Capacity
M6 = 64Mbits
Supply Voltage
V = 3 V system
Device type
F = NOR Flash memory
Toshiba CMOS E2PROM
Ordering type
TC58FVM6T2AFT65
TC58FVM6B2AFT65
TC58FVM6T2AXB65
TC58FVM6B2AXB65
Boot block
Top
Bottom
Top
Bottom
Bank ratio
1:3:3:1
Package
TSOPI48-P-1220-0.50
P-TFBGA56-0710-0.80AZ
2003-01-29 2/61


Part Number TC58FVM6T2AFT65
Description 64MBIT (8M x 8 BITS/4M x 16 BITS) CMOS FLASH MEMORY
Maker Toshiba
Total Page 30 Pages
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