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TC58FVM7B2AFT65 - 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY

This page provides the datasheet information for the TC58FVM7B2AFT65, a member of the TC58FVM7B2 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY family.

Datasheet Summary

Description

The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits.

Features

  • commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation.

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Datasheet preview – TC58FVM7B2AFT65

Datasheet Details

Part number TC58FVM7B2AFT65
Manufacturer Toshiba
File Size 649.73 KB
Description 128-MBIT (16M x 8 BITS / 8M x 16 BITS) CMOS FLASH MEMORY
Datasheet download datasheet TC58FVM7B2AFT65 Datasheet
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TC58FVM7(T/B)2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M × 8 BITS / 8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVM7T2A/B2A also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES • Power supply voltage • Access Time (Random/Page) VDD = 2.3 V~3.
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