Datasheet Details
| Part number | TC58NVG2S3EBAI5 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 651.96 KB |
| Description | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58NVG2S3EBAI5 Download (PDF)
|
|
|
| Part number | TC58NVG2S3EBAI5 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 651.96 KB |
| Description | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58NVG2S3EBAI5 Download (PDF)
|
|
|
|
The TC58NVG2S3E is a single 3.3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 64) bytes 64 pages 4096blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes 4 Kbytes: 2112 bytes 64 pages).
TC58NVG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M 8 BIT) CMOS NAND.
| Part Number | Description |
|---|---|
| TC58NVG2S3ETA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S3ETAI0 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG2S0FTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0FTAI0 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NVG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HBAI6 | 4G-BIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HTA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2S0HTAI0 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NVG2D4BFT00 | 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM |