Datasheet Details
| Part number | TC58NYG1S3HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 715.75 KB |
| Description | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58NYG1S3HBAI6 Download (PDF)
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| Part number | TC58NYG1S3HBAI6 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 715.75 KB |
| Description | 2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
| Download |
TC58NYG1S3HBAI6 Download (PDF)
|
|
|
|
The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks.
The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes 8 Kbytes: 2176 bytes 64 pages).
TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 8 BIT) CMOS NAND.
| Part Number | Description |
|---|---|
| TC58NYG1S3HBAI4 | 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG0S3EBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG0S3HBAI4 | 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S0FBAI4 | 4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI4 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S0HBAI6 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NYG2S3ETA00 | 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM |
| TC58NS100DC | 1 GBit CMOS NAND EPROM |
| TC58NS128BDC | 128 MBit CMOS NAND EPROM |
| TC58NS256BDC | 256 MBit CMOS NAND EPROM |