Datasheet Summary
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TC59SM816CFTI-75,-80
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
4,194,304-WORDS × 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION
TC59SM816CFTI is a CMOS synchronous dynamic random access memory organized as 4,194,304-words × 4 banks × 16 bits. Fully synchronous operations are referenced to the positive edges of clock input and can transfer data up to 133M words per second. These devices are controlled by mands setting. Each bank are kept active so that DRAM core sense amplifiers can be used as a cache. The refresh functions, either Auto Refresh or Self Refresh are easy to use. By having a programmable Mode Register, the system can...