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TC74HC10AFN Datasheet TRIPLE 3-INPUT NAND GATE

Manufacturer: Toshiba

Download the TC74HC10AFN datasheet PDF. This datasheet also includes the TC74HC10 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (TC74HC10_Toshiba.pdf) that lists specifications for multiple related part numbers.

Overview

TC74HC10AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC10AP, TC74HC10AF Triple 3-Input NAND Gate The TC74HC10A is a high speed CMOS 3-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

Key Features

  • High speed: tpd = 6 ns (typ. ) at VCC = 5 V.
  • Low power dissipation: ICC = 1 μA (max) at Ta = 25°C.
  • High noise immunity: VNIH = VNIL = 28% VCC (min).
  • Output drive capability: 10 LSTTL loads.
  • Symmetrical output impedance: |IOH| = IOL = 4 mA (min).
  • Balanced propagation delays: tpLH ∼.
  • tpHL.
  • Wide operating voltage range: VCC (opr) = 2 to 6 V.
  • Pin and function compatible with 74LS10 Pin Assignment T.

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