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TC74HCU04AP - Hex Inverter

General Description

2.

The TC74HCU04AP is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Key Features

  • (1) High speed: tpd = 4 ns (typ. ) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25.
  • (3) High noise immunity: VNIH = VNIL = 10 % VCC (min) (4) Symmetrical output impedance: |IOH| = IOL = 4 mA (min) (5) Balanced propagation delays: tPLH ≈ tPHL (6) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging DIP14 ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1986-10 2021-01-07 Rev.1.0 5. Pin Assignment 6. Marking 7.

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CMOS Digital Integrated Circuits Silicon Monolithic TC74HCU04AP TC74HCU04AP 1. Functional Description • Hex Inverter 2. General The TC74HCU04AP is a high speed CMOS INVERTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Since the internal circuit is composed of a single stage inverter, it can be used in analog applications such as crystal oscillators. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 4 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.