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Toshiba Electronic Components Datasheet

TC74VHC86FK Datasheet

Quad Exclusive OR Gate

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TC74VHC86F/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC74VHC86F, TC74VHC86FK
Quad Exclusive OR Gate
The TC74VHC86 is an advanced high speed CMOS QUAD EXCLUSIVE
OR GATE fabricated with silicon gate C2MOS technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky
TTL while maintaining the CMOS low power dissipation.
The internal circuit is includes on output buffer, which provide high noise
immunity and stable output.
An Input protection circuit ensures that 0 to 5.5 V can be applied to the
input pins without regard to the supply voltage. This device can be used to
interface 5 V to 3 V systems and on two supply system such as battery back
up. This circuit prevents device destruction due to mismatched supply and
input voltages.
Features
High speed: tpd = 4.8 ns (typ.) at VCC = 5 V
Low power dissipation: ICC = 2 μA (max) at Ta = 25°C
High noise immunity: VNIH = VNIL = 28% VCC (min)
Power down protection is provided on all inputs.
Balanced propagation delays: tpLH tpHL
Wide operating voltage range: VCC (opr) = 2 V to 5.5 V
Low noise: VOLP = 0.8 V (max)
Pin and function compatible with 74ALS86
TC74VHC86F
TC74VHC86FK
Weight
SOP14-P-300-1.27A
VSSOP14-P-0030-0.50
: 0.18 g (typ.)
: 0.02 g (typ.)
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1991-05
2019-01-31


Toshiba Electronic Components Datasheet

TC74VHC86FK Datasheet

Quad Exclusive OR Gate

No Preview Available !

Pin Assignment
IEC Logic Symbol
TC74VHC86F/FK
1A 1
1B 2
1Y 3
2A 4
2B 5
2Y 6
GND 7
(top view)
Truth Table
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
L
14 VCC
13 4B
12 4A
11 4Y
10 3B
9 3A
8 3Y
1A (1)
=1
1B (2)
2A (4)
2B (5)
3A (9)
3B (10)
4A (12)
4B (13)
(3) 1Y
(6) 2Y
(8) 3Y
(11) 4Y
Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
0.5 to 7.0
V
0.5 to 7.0
V
0.5 to VCC + 0.5
V
20
mA
±20
mA
±25
mA
±50
mA
180
mW
65 to 150
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the
operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-01-31


Part Number TC74VHC86FK
Description Quad Exclusive OR Gate
Maker Toshiba
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TC74VHC86FK Datasheet PDF






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