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Toshiba Electronic Components Datasheet

TC75S101FU Datasheet

Single Operational Amplifier

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TC75S101F/FU/FE
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S101F, TC75S101FU, TC75S101FE
Single Operational Amplifier (Input and Output Full Range)
Features
Input and Output Full Range
Low-input offset voltage : VIO = 3.0 mV (max.)
Low-input bias current
: II = 0.1 pA (typ.)
Built-in phase-compensated op-amp, obviating the need for any
external device
Ultra-small package
TC75S101F
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD, VSS
6
V
Differential input voltage
DVIN
±6
V
Input voltage
VIN
VDD to VSS
V
TC75S101F/FU
Power dissipation
PD
TC75S101FE
200
mW
100
Operating temperature
Storage temperature
Topr
-40 to 85
°C
Tstg
-55 to 125
°C
SSOP5-P-0.95
TC75S101FU
(SMV)
SSOP5-P-0.65A
TC75S101FE
(USV)
Product device does not use these for open-loop configuration.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
SON5-P-0.50
Weight
SSOP5-P-0.95 : 14 mg (typ.)
SSOP5-P-0.65A : 6.2 mg (typ.)
SON5-P-0.50 : 3.0 mg (typ.)
(ESV)
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc)
Operating Conditions
Characteristics
Supply voltage
Symbol
Rating
Unit
1.5 to 5.5
VDD, VSS
V
±0.75 to 2.75
Start of commercial production
2007-12
1
2014-03-01


Toshiba Electronic Components Datasheet

TC75S101FU Datasheet

Single Operational Amplifier

No Preview Available !

Marking (top view)
SJ
TC75S101F/FU/FE
Pin Connection (top view)
VDD
5
OUT
4
1
2
3
IN (+) VSS IN ()
Electrical Characteristics
DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode input signal
rejection ratio
Supply voltage rejection ratio
Supply current
Source current
Sink current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
CMRR
SVRR
IDD
Isource
Isink
Test Condition
RS = 1, RF = 100 k
RS = 1, RF = 100 k
RL 100 k
RL 100 k
VIN = 0.0 to 3.0 V
VDD = 1.8 to 6.0 V
DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Supply current
Source current
Sink current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
IDD
Isource
Isink
Test Condition
RS = 1, RF = 100 k
RS = 1, RF = 100 k
RL 100 k
RL 100 k
Min Typ. Max Unit
1.2
3.0 mV
0.1
pA
0.1
pA
0
3.0
V
40 110
dB
2.9
V
0.1
50
66
dB
65
90
dB
63
90
μA
70 110
μA
800 1500
μA
Min Typ. Max Unit
0.9
3.0 mV
0.1
pA
0.1
pA
0
1.8
V
40 100
dB
1.7
V
0.1
57
80
μA
50
95
μA
700 1450
μA
2
2014-03-01


Part Number TC75S101FU
Description Single Operational Amplifier
Maker Toshiba
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TC75S101FU Datasheet PDF






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