TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S102F
Single Operational Amplifier
Ultra-Low supply current
TC75S102F
Features
• Input and Output Full Range
• Ultra-Low supply current 0.27µA (Typ.) @VDD=1.5V
• Low Input offset voltage 1.3mV (Max) @VDD=1.5V
• Wide Operating Voltage Range 1.5V to 5.5V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD - VSS
6
V
Differential input voltage DVIN
±6
V
Input voltage
VIN
VDD to VSS
V
Output voltage
VOUT VSS -0.3V to VDD +0.3V ≤ VSS + 6V V
Output current
IOUT
±25
mA
Power dissipation
PD
200
mW
Operating temperature
Topr
-40 to 105
°C
Storage temperature
Tstg
-55 to 150
°C
SMV
Weight:
SMV (SOT-25)(SC-74A) :14 mg (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Operating Ratings (Ta = -40 to 105°C)
Characteristics
Supply voltage
Symbol
Rating
Unit
VDD - VSS
1.5 to 5.5
V
Note2: A higher load capacitance will increase the risk of voltage oscillation. Allow sufficient capacitance value
when designing your circuit and using this product to prevent voltage oscillation.
Note3: This device is sensitive to electrostatic discharge.
Please ensure equipment, operator and tools are adequately earthed when handling.
Start of commercial production
2020-06
© 2020
1
Toshiba Electronic Devices & Storage Corporation
2020-06-05
