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Toshiba Electronic Components Datasheet

TC75S102F Datasheet

Single Operational Amplifier

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S102F
Single Operational Amplifier
Ultra-Low supply current
TC75S102F
Features
Input and Output Full Range
Ultra-Low supply current 0.27µA (Typ.) @VDD=1.5V
Low Input offset voltage 1.3mV (Max) @VDD=1.5V
Wide Operating Voltage Range 1.5V to 5.5V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD - VSS
6
V
Differential input voltage DVIN
±6
V
Input voltage
VIN
VDD to VSS
V
Output voltage
VOUT VSS -0.3V to VDD +0.3V VSS + 6V V
Output current
IOUT
±25
mA
Power dissipation
PD
200
mW
Operating temperature
Topr
-40 to 105
°C
Storage temperature
Tstg
-55 to 150
°C
SMV
Weight:
SMV (SOT-25)(SC-74A) :14 mg (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Operating Ratings (Ta = -40 to 105°C)
Characteristics
Supply voltage
Symbol
Rating
Unit
VDD - VSS
1.5 to 5.5
V
Note2: A higher load capacitance will increase the risk of voltage oscillation. Allow sufficient capacitance value
when designing your circuit and using this product to prevent voltage oscillation.
Note3: This device is sensitive to electrostatic discharge.
Please ensure equipment, operator and tools are adequately earthed when handling.
Start of commercial production
2020-06
© 2020
1
Toshiba Electronic Devices & Storage Corporation
2020-06-05


Toshiba Electronic Components Datasheet

TC75S102F Datasheet

Single Operational Amplifier

No Preview Available !

Marking (top view)
5
4
SA2
1
2
3
TC75S102F
Pin Assignment (top view)
VDD
IN (-)
5
4
-
+
1
2
3
OUT VSS IN (+)
Electrical Characteristics
DC Characteristics (VDD = 1.5V, VSS = GND, Ta = 25°C, VIN = VDD/2, unless otherwise noted.)
Characteristics
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
Input offset voltage
VIO
1 RS = 1 k, RF = 100k
-1.3 -0.1 1.3
mV
Input offset voltage drift
VIOdrift
1 RS = 1 k, RF = 100k
-
2.8
-
µV/°C
Input offset current
Input bias current
IIO
-
-
II
-
-
-
1
-
pA
-
1
-
pA
Common mode input voltage
Voltage gain (open loop)
CMVIN
GV
2 RS = 1 k, RF = 100k
-
-
0
-
VDD
V
64 139
-
dB
Maximum output voltage
VOH
VOL
3 RL 100 k
4 RL 100 k
1.4
-
-
V
-
-
0.1
Common mode input signal
rejection ratio
CMRR
2 VIN = 0 to 1.5V
53
80
-
dB
Supply voltage rejection ratio
SVRR
1 VDD = 1.5 to 5.0V
61
80
-
dB
Supply current
Ta = -40 to 105°C
IDD
5
Ta = 25°C
-
0.27 0.60
µA
-
0.27 0.46
µA
Source current
Isource
6
-
0.34 0.6
-
mA
Sink current
Isink
7
-
0.28 0.4
-
mA
AC Characteristics (VDD = 0.75 V, VSS = -0.75 V, Ta = 25°C)
Characteristics
Unity Gain Cross Frequency
Phase margin
Slew Rate
Symbol
fT
Φm
SR
Test
Circuit
-
-
-
Test Condition
-
-
-
Min Typ. Max
Unit
-
0.5
-
kHz
-
53
-
degrees
-
0.37
-
V/ms
© 2020
2
Toshiba Electronic Devices & Storage Corporation
2020-06-05


Part Number TC75S102F
Description Single Operational Amplifier
Maker Toshiba
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TC75S102F Datasheet PDF






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