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Toshiba Electronic Components Datasheet

TC75S51FE Datasheet

Single Operational Amplifier

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S51FE
TC75S51FE
Single Operational Amplifier
The TC75S51FE is a CMOS single-operation amplifier which incorporates
a phase compensation circuit. It is designed with a low-voltage and low-
current power supply; this differentiates this device from general-purpose
bipolar op-amps.
Features
Low-voltage operation : VDD = ±0.75 to ±3.5 V or 1.5 to 7 V
Low-current power supply : IDD (VDD = 3 V) = 60 µA (typ.)
Built-in phase-compensated op-amp, obviating the need for any
external device
Ultra-compact package
TC75S51FE
SON5-P-0.50 (ESV)
Weight
SON5-P-0.50 : 0.003 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Differential input voltage
Input voltage
Power dissipation
Operating temperature
Storage temperature
VDD, VSS
7
V
DVIN
±7
V
VIN
VDD to VSS
V
PD
100
mW
Topr
40 to 85
°C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant
change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating
ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated
failure rate, etc).
© 2019
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
1993-07
2019-09-11


Toshiba Electronic Components Datasheet

TC75S51FE Datasheet

Single Operational Amplifier

No Preview Available !

Marking (top view)
Pin Connection (top view)
TC75S51FE
5
4
SC
VDD
5
OUT
4
1
2
3
1
2
3
IN (+) VSS IN ()
Electrical Characteristics
DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode input signal
rejection ratio
Supply voltage rejection ratio
Supply current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
CMRR
SVRR
IDD
Test
Circuit
Test Condition
1 RS = 1 kΩ, RF = 100 k
2 RS = 1 kΩ, RF = 100 k
3 RL 100 k
4 RL 100 k
2 VIN = 0.0 to 2.5 V
1 VDD = 1.5 to 7.0 V
5
Min Typ. Max Unit
2
10 mV
1
pA
1
pA
0
2.5
V
60
70
dB
2.9
V
0.1
55
65
dB
60
70
dB
60 200 µA
DC Characteristics (VDD = 1.5 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Supply current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
IDD
Test
Circuit
Test Condition
1 RS = 10 kΩ, RF = 100 k
2 RS = 10 kΩ, RF = 100 k
3 RL 100 k
4 RL 100 k
5
Note: For this device, please use a source current of no more than 70 µA.
Min Typ. Max Unit
2
10 mV
1
pA
1
pA
0
1.0
V
60
70
dB
1.4
V
0.1
50 150 µA
© 2019
2
Toshiba Electronic Devices & Storage Corporation
2019-09-11


Part Number TC75S51FE
Description Single Operational Amplifier
Maker Toshiba
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TC75S51FE Datasheet PDF






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