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Toshiba Electronic Components Datasheet

TC75S61TU Datasheet

Single Operational Amplifier

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TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TC75S61TU
Single Operational Amplifier (Low Noise Operational Amplifier)
TC75S61TU
Features
Low Noise Operational Amplifier: VNI = 15 nV/Hz(typ.)
at VDD=3.3 V
Small Phase Delay: -2.5 degree (typ.) at VDD=3.3 V
Low Current Consumption: 230 μA (typ.) at VDD=3.3 V
Ultra-compact package
Absolute Maximum Ratings (Ta = 25°C)
TC75S61TU
SON5-P-0202-0.65B
(UFV)
Weight
SON5-P-0202-0.65B : 0.007 g (typ.)
Characteristics
Symbol
Rating
Unit
Supply voltage
Differential input voltage
Input voltage
Output current
Power dissipation
Operating temperature
Storage temperature
VDD, VSS
6
V
DVIN
±6
V
VIN
VDD to VSS
V
IOUT
±4
mA
PD
450(Note1)
mW
Topr
40 to 85
°C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note1: Mounted on a glass epoxy circuit board of 30 mm × 30 mm. Pad dimension of 35mm2
Operating Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
VDD, VSS
2.2 to 5.5
V
Note
1. Do not use this product in a voltage follower circuit or outside the range of the common mode input voltage.
(For the common mode input voltage, see DC Characteristics on Page 2). Failure to follow this instruction may cause
voltage oscillation.
2. A higher load capacitance will increase the risk of voltage oscillation, even if this product is used within the range of
the common mode input voltage. Allow sufficient capacitance value margin when designing your circuit and using this
product to prevent voltage oscillation.
Start of commercial production
2008-01
1
2014-03-01


Toshiba Electronic Components Datasheet

TC75S61TU Datasheet

Single Operational Amplifier

No Preview Available !

Marking (top view)
Pin Connection (top view)
TC75S61TU
5
4
SN
1
2
3
VDD
5
OUT
4
1
2
3
IN (+) VSS IN ()
Electrical Characteristics
DC Characteristics (VDD = 3.3 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode input signal
rejection ratio
Supply voltage rejection ratio
Supply current
Source current
Sink current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
CMRR
SVRR
IDD
Isource
Isink
Test
Circuit
Test Condition
1 RS = 1 kΩ, RF = 100 kΩ
2 RS = 1 kΩ, RF = 100 kΩ
3 RL 100 kΩ
4 RL 100 kΩ
2 VIN = 0.95 to 2.35 V
1 VDD = 2.2 to 5.5 V
5
6
7
Min Typ. Max Unit
1.5
10
mV
1
pA
1
pA
0.95
2.35
V
60
70
dB
3.2
V
0.1
54
85
dB
60
77
dB
230 550 μA
500 800
μA
1200 3000
μA
AC Characteristics (VDD = 3.3 V, VSS = GND, Ta = 25°C)
Characteristics
Equivalent input Noise Voltage
Unity Gain Cross Frequency
Phase delay
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
VNI
f=1kHz,
AV=40dB,RS=100Ω,Rf=10kΩ
15
nV/
Hz
fT
AV = 40 dB
3.5
MHz
φD
8 f=2kHz
-2.5
degree
AC Characteristics (VDD = 1.65 V, VSS = -1.65V, Ta = 25°C)
Characteristics
Slew Rate
Symbol
SR
Test
Circuit
Test Condition
9 AV = 12 dB,VIN=± 0.4V
Min Typ. Max Unit
2.9
V/μs
2
2014-03-01


Part Number TC75S61TU
Description Single Operational Amplifier
Maker Toshiba
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TC75S61TU Datasheet PDF






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