TC75S70L6X
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol Note
Rating
Unit
Supply voltage
Differential input voltage
VDD
∆VIN
±3.0 or 6.0
V
±6.0
V
Input voltage
Output current
VIN
IOUT
VSS to VDD
V
±35
mA
Power dissipation
Operating temperature
Storage temperature
Junction temperature
PD (Note 1)
250
mW
Topr
-40 to 85
�
Tstg
-55 to 125
�
Tj
125
�
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Since this device is susceptible to latch-up, a phenomenon inherent to CMOS devices, follow these
considerations:
- Don't raise the voltage level of the output pins above VDD or lower it below VSS.
Consider the power-on timing as well.
- Ensure that any abnormal noise is not introduced into the device.
Note 1: Mounted on an FR4 board.
6. Operating Ratings (Unless otherwise specified, Ta = 25 �)
Supply voltage
Supply voltage
Characteristics
7. Thermal Characteristics
Symbol
VDD
VDD,VSS
Rating
Unit
1.3 to 5.5
V
±0.65 to 2.75
V
Characteristics
Thermal resistance (junction-to-ambient)
Note 1: Mounted on an FR4 board.
(Note 1)
Symbol
Rth(j-a)
Rating
400
Unit
�/W
©2020
2
Toshiba Electronic Devices & Storage Corporation
2020-11-26
Rev.3.0
