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Toshiba Electronic Components Datasheet

TC75W60FK Datasheet

Dual Operational Amplifier

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TC75W60FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC75W60FU, TC75W60FK
Dual Operational Amplifier
Features
High slew rate : SR (VDD = 3 V) = 5.1 V/μs (typ.)
Single and dual power Supply operations are possible.
: VDD = ±0.9 to 3.5 V or 1.8 to 7 V
Lower supply current than general-purpose bipolar type op amps
: IDD (VDD = 3 V) = 660 μA (typ.)
The internally phase compensated operational amplifier.
Small package
TC75W60FU
TC75W60FK
Weight
SSOP8-P-0.65 : 0.021 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
Differential input voltage
VDD, VSS
7
V
DVIN
±7
V
Input voltage
VIN
VDD to VSS
V
TC75W60FU
Power dissipation
PD
TC75W60FK
250
mW
200
Operating temperature
Storage temperature
Topr
40 to 85
°C
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2001-07
1
2014-03-01


Toshiba Electronic Components Datasheet

TC75W60FK Datasheet

Dual Operational Amplifier

No Preview Available !

Marking (top view)
TC75W60FU/FK
Pin Connection (top view)
TC75W60FU
876
5W60
Type name
5
Lot No.
TC75W60FK
8765
5W
60
VDD OUT IN () IN (+)
8765
1234
1234
1234
OUT IN () IN (+) VSS
Electrical Characteristics
DC Characteristics (VDD = 3.0 V, VSS = GND, Ta = 25°C)
Characteristics
Symbol
Test
Circuit
Test Condition
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
Maximum output voltage
Common mode rejection ratio
Suuply voltage rejection ratio
Supply current
Source current
Sink current
VIO
IIO
II
CMVIN
GV
VOH
VOL
CMRR
SVRR
IDD
Isource
Isink
RS = 1 kΩ
RL = 100 kΩ
RL = 100 kΩ
VIN = 0.0 to 2.1 V
VDD = 1.8 to 7.0 V
DC Characteristics (VDD = 1.8 V, VSS = GND, Ta = 25°C)
Characteristics
Input offset voltage
Input offset current
Input bias current
Common mode input voltage
Voltage gain (open loop)
maximum output voltage
Common mode rejection ratio
Supply current
Source current
Sink current
Symbol
VIO
IIO
II
CMVIN
GV
VOH
VOL
CMRR
IDD
Isource
Isink
Test
Circuit
Test Condition
RS = 1 kΩ
RL = 100 kΩ
RL = 100 kΩ
VIN = 0.3 to 0.9 V
Min Typ. Max Unit
2
7
mV
1
pA
1
pA
0.0
2.1
V
60
70
dB
2.9
V
0.1
54
70
dB
60
70
dB
660 1000 μA
330 700
μA
600 1250
μA
Min Typ. Max Unit
2
7
mV
1
pA
1
pA
0.3
0.9
V
70
dB
1.7
V
0.1
50
60
dB
600 900 μA
300 700
μA
550 1150
μA
2
2014-03-01


Part Number TC75W60FK
Description Dual Operational Amplifier
Maker Toshiba
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TC75W60FK Datasheet PDF






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