TC75W60FU Datasheet | Toshiba

Features - High slew rate : SR (VDD = 3 V) = 5.1 V/μs (typ.) - Single and dual power Supply operations are possible. : VDD = ±0.9 to 3.5 V or 1.8 to 7 V - Lower supply current than general-purpose bipolar type op amps : IDD (VDD = 3 V) = 660 μA (typ.) - The internally phase pensated operational amplifier. - Small package TC75W60FU TC75W60FK Weight SSOP8-P-0.65 : 0.021 g (typ.) SSOP8-P-0.50A : 0.01 g (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage Differential input voltage VDD, VSS DVIN ±7 Input voltage VDD to VSS Power dissipation TC75W60FK 250 m W Operating temperature Storage temperature Topr - 40 to 85 °C Tstg - 55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of mercial production 2001-07...