Inverter
TC7SG04FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SG04FE
Features
• High output current
: ±8 mA (min) at VCC = 3.0 V
• Super high speed operation : tpd = 2.3 ns (typ.)
at VCC = 3.3 V,15pF
• Operating voltage range : VCC = 0.9 to 3.6 V
• 5.5-V tolerant input
• 3.6-V power down protection output
Marking
W5
Product name
Weight: 0.003 g (typ.)
(ESV)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Pin Assignment (top view)
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
−0.5 to 4.6
V
VIN
−0.5 to 7.0
V
−0.5 to 4.6 (Note 1)
VOUT
V
−0.5 to VCC + 0.5 (Note 2)
IIK
IOK
IOUT
−20
mA
−20 (Note 3)
mA
±25
mA
ICC
±50
mA
PD
150
mW
Tstg
−65 to 150
°C
NC 1
IN A 2
GND 3
5 VCC
4 OUT Y
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0V
Note 2: High or Low state. Do not exceed IOUT of absolute maximum ratings.
Note 3: VOUT < GND
Start of commercial production
2004-12
1
2014-03-01
