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TC7SH00FE - 2-Input NAND Gate

Features

  • High speed operation : tpd = 3.7ns (typ. ) at VCC = 5V, 15pF.
  • Low power dissipation : ICC = 2μA (max) at Ta = 25°C.
  • Wide operating voltage range : VCC = 2 to 5.5V.
  • High noise immunity : VNIH = VNIL = 28% VCC (min).
  • 5.5V tolerant inputs Weight: 0.003 g (typ. ) (ESV) Marking H1 Product name Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC.

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TC7SH00FE TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH00FE 2-Input NAND Gate Features • High speed operation : tpd = 3.7ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2μA (max) at Ta = 25°C • Wide operating voltage range : VCC = 2 to 5.5V • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5V tolerant inputs Weight: 0.003 g (typ.) (ESV) Marking H1 Product name Pin Assignment (top view) IN B 1 5 VCC IN A 2 GND 3 4 OUT Y Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature VCC VIN VOUT IIK IOK IOUT ICC PD Tstg − 0.5 to 7 V − 0.5 to 7 V − 0.
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