TC7SH02FE
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7SH02FE
2-Input NOR Gate
Features
• High speed operation : tpd = 3.6 ns (typ.) at VCC = 5V, 15pF
• Low power dissipation : ICC = 2 μA (max) at Ta = 25°C
• High noise immunity : VNIH = VNIL =28% VCC (min)
• 5.5V tolerant inputs
• Wide operating voltage range : VCC = 2 to 5.5V
Weight: 0.003 g (typ.)
(ESV)
Marking
H3
Product name
Pin Assignment (top view)
IN B 1
IN A 2
5 VCC
GND 3
4 OUT Y
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
Storage temperature
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
− 0.5 to 7
V
− 0.5 to 7
V
− 0.5 to VCC + 0.5
V
− 20
mA
± 20
(Note 1) mA
± 25
mA
± 50
mA
150
mW
− 65 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note1: VOUT < GND, VOUT > VCC
Start of commercial production
2003-09
1
2014-03-01
