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TC7SZ00AFS - 2-Input NAND Gate

General Description

2.

Key Features

  • (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High output current: ±24 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.4 ns (typ. ) at VCC = 5.0 V, CL = 50 pF (4) Operation voltage range: VCC = 1.65 to 5.5 V (5) 5.5 V tolerant inputs Note 1: For devices with the ordering part number ending in J(T. Topr = -40 to 85  for the other devices. 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) ©2016-2019 Toshiba Electronic Devi.

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CMOS Digital Integrated Circuits Silicon Monolithic TC7SZ00AFS TC7SZ00AFS 1. Functional Description • 2-Input NAND Gate 2. Features (1) Wide operating temperature range: Topr = -40 to 125  (Note 1) (2) High output current: ±24 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.4 ns (typ.) at VCC = 5.0 V, CL = 50 pF (4) Operation voltage range: VCC = 1.65 to 5.5 V (5) 5.5 V tolerant inputs Note 1: For devices with the ordering part number ending in J(T. Topr = -40 to 85  for the other devices. 3. Packaging fSV 4. Marking and Pin Assignment Marking Pin Assignment (Top view) ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2008-02 2019-01-30 Rev.3.0 5. IEC Logic Symbol TC7SZ00AFS 6.