TC7WZ38FU/FK
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7WZ38FU, TC7WZ38FK
Dual 2 Input NAND Gate (Open Drain)
Features
• High output current: 24 mA (min) at VCC = 3 V
• Super high speed operation: tpZL = 2.2 ns (typ.)
at VCC = 5 V, 50 pF
• Operation voltage range: VCC (opr) = 1.65 to 5.5 V
• 5.5-V tolerant inputs
• 5.5-V power down protection outputs
• Matches the performance of TC74LCX series when operated at
3.3-V VCC
TC7WZ38FU
TC7WZ38FK
(SM8)
Marking
SM8
Product name
US8
Z 38
Lot No.
WZ
38
Absolute Maximum Ratings (Ta = 25°C)
Weight
SSOP8-P-0.65
SSOP8-P-0.50A
(US8)
: 0.02 g (typ.)
: 0.01 g (typ.)
Characteristics
Symbol
Rating
Unit
Pin Assignment (top view)
Power supply voltage
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC VCC/ground current
Power dissipation
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
−0.5 to 6
V
−0.5 to 6
V
−0.5 to 6 (Note 1) V
−20
mA
−20 (Note 2) mA
50
mA
±50
mA
300 (SM8)
mW
200 (US8)
1A 1
1B 2
2Y 3
GND 4
8 VCC
7 1Y
6 2B
5 2A
Storage temperature
Lead temperature (10s)
Tstg
−65 to 150
°C
TL
260
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Do not exceed IOUT of absolute maximum ratings.
Note 2: VOUT < GND
Start of commercial production
2000-08
1
2014-03-01
