TCR2EE295 Datasheet | Toshiba

feature overcurrent protection, an Auto-discharge function. The TCR2EF and TCR2EE series has a low dropout voltage of 180 m V (2.5 V output, IOUT = 150 m A) with low output noise voltage of 35 μVrms (2.5 V output) and a load transient response of only ⊿VOUT = ±60 m V (IOUT = 1 m A⇔150 m A, COUT = 1.0 μF). Thus, the TCR2EF and TCR2EE series are suitable for sensitive power supply such as Analog and RF applications. Features - Low dropout voltage VDO = 150 m V (typ.) at 3.0 V output, IOUT = 150 m A VDO = 180 m V (typ.) at 2.5 V output, IOUT = 150 m A Weight : SMV (SOT-25)(SC-74A) : 16 mg ( typ.) ESV (SOT-553) : 3.0 mg ( typ.) VDO = 230 m V (typ.) at 1.8 V output, IOUT = 150 m A VDO = 380 m V (typ.) at 1.2 V output, IOUT = 150 m A VDO = 510 m V (typ.) at 1.0 V output, IOUT = 150 m A - Low output noise voltage (VNO = 35 μVrms (typ.) at 2.5 V output, IOUT = 10 m A, 10 Hz < f < 100 k Hz) - Fast load transient response (⊿VOUT = ±60 m V (typ.) at IOUT = 1 m A ⇔ 150 m A, COUT =1.0 μF) - Low quiescent bias current (IB = 35 μA (typ.) at IOUT = 0 m A) - High ripple rejection ratio (73 d B (typ.) at 2.5 V output, IOUT = 10 m A, f = 1 k Hz) - Wide range output voltage line up (VOUT = 1.0 to 5.0 V) - High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT) - Overcurrent protection - Auto-discharge - Pull down connection between CONTROL and GND - Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 1.0 μF) - Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm) General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm) © 2017-2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2012-10 2019-06-20 Absolute Maximum Ratings (Ta = 25°C) TCR2EF series, TCR2EE series Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Power dissipation Junction temperature Storage temperature range VIN VCT...