TCR2LN115 Datasheet | Toshiba

feature overcurrent protection and auto-discharge option. The TCR2LN series is offered in the ultra small plastic mold package SDFN4/SDFN4E (0.8 mm x 0.8 mm x 0.38 mm) and has a low dropout voltage of 250 m V (2.5 V output, IOUT = 150 m A). As small ceramic input and output capacitors 0.1 μF can be used with the TCR2LN series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones. Weight : 0.6 mg ( typ.) SDFN4/SDFN4E Features - Low quiescent bias current (IB = 2 μA (max) at IOUT = 0 m A, Tj = -40 to 85 °C) - Low dropout voltage VDO = 250 m V (typ.) at 2.5 V-output, IOUT = 150 m A - Wide range output voltage line up (VOUT = 0.8 to 3.6 V) - High VOUT accuracy ±1.0 % (1.8 V ≤ VOUT) - Overcurrent protection - Auto-discharge - Pull down connection between CONTROL and GND - Ceramic capacitors can be used (CIN = 0.1 μF, COUT = 0.1 μF) - Ultra small package SDFN4 (0.8 mm x 0.8 mm x 0.38 mm) © 2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2014-08 2021-08-31 Absolute Maximum Ratings (Ta = 25°C) Characteristics Input voltage Control voltage Output voltage Output current Power dissipation Operating temperature range Junction temperature Storage temperature range Symbol VIN VCT VOUT IOUT PD Topr Tj Tstg Rating 6.0 -0.3 to 6.0 -0.3 to VIN + 0.3 200 300 (Note1) - 40 to 85 150 - 55 to 150 TCR2LN series Unit V V V m A m W °C °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data...