TCR3UM10A Datasheet | Toshiba

feature Over-current protection, Thermal Shutdown function and Auto-discharge. The TCR3UM series is offered in the ultra small plastic mold package DFN4 (1.0 mm x 1.0 mm; t 0.60 mm (max)) and has a low dropout voltage of 196 m V (3.3 V output, IOUT = 300 m A). As small ceramic input and output capacitors 1 μF can be used with the TCR3UM series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones, Io T equipment and wearable devices. BOTTOM VIEW ILLUSTRATION DFN4 Weight: 1.3 mg (typ.) Applications Power IC developed for portable applications, Io T equipment and wearable devices Features - Ultra small package DFN4 (1.0 mm x 1.0 mm; t 0.60 mm (max)). - Low quiescent bias current ( IB = 0.34 μA (typ.) at IOUT = 0 m A, output voltage up to 1.5 V) - High Ripple rejection ratio 70 d B at 0.8 V-output - Fast Load transient response -51/+36 m V at 0.8 V-output, IOUT = 1 m A ⇔ 50 m A - Low Drop-Out voltage VIN-VOUT = 196 m V (typ.) at 3.3 V-output, IOUT = 300 m A - Wide range output voltage line up (VOUT = 0.8 to 5.0 V) - High VOUT accuracy ± 1.0 % (1.8 V ≤ VOUT) - Overcurrent protection - Thermal Shutdown function - Auto-discharge - Inrush current protection circuit - Pull down connection between CONTROL and GND - Ceramic capacitors can be used (CIN = 1 μF, COUT = 1 μF) © 2018 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2018-08 2018-08-20 Absolute Maximum Ratings (Ta = 25°C) TCR3UM series Characteristics Symbol Rating Unit Input voltage Control voltage Output voltage Power dissipation Junction temperature Storage temperature range VIN VCT VOUT PD Tj Tstg -0.3 to 6.0 -0.3 to VIN + 0.3 ≤...