TDTA143Z
TDTA143Z is Silicon PNP Transistor manufactured by Toshiba.
Features
(1) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time.
(2) Toshiba offers transistors with a wide range of resistance to acmodate various circuit designs. (3) plementary to TDTC143Z
3. Packaging and Internal Circuit
1: IN (Base) 2: GND (Emitter) 3: OUT (Collector)
SOT23
4. Absolute Maximum Ratings (Note) (Unless otherwise specified,, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Supply voltage
-50
Output current
-100 m A
Power dissipation Junction temperature
320 m W
Tj
- Storage temperature
Tstg
-55 to 150
- Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
©2016-2020
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-03
2020-11-13 Rev.3.0
5. Electrical Characteristics (Unless otherwise specified, Ta = 25
- )
Characteristics
Input voltage (off) Input voltage (on) Output voltage Input bias current Output current DC current gain Input resistance Resistance ratio Transition frequency
Symbol...
