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Toshiba Electronic Components Datasheet

TDTC123J Datasheet

NPN Transistor

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Bipolar Transistors Silicon NPN Epitaxial Type
TDTC123J
TDTC123J
1. Applications
• Switching
• Inverter Circuits
• Driver Circuits
2. Features
(1) The integrated bias resistor reduces the number of external parts required, making it possible to reduce
system size and assembly time.
(2) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs.
(3) Complementary to TDTA123J
3. Packaging and Internal Circuit
1: IN (Base)
2: GND (Emitter)
3: OUT (Collector)
SOT23
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
50
V
Output current
IO
100
mA
Power dissipation
Junction temperature
PD
320
mW
Tj
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2016-2020
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2016-03
2020-11-13
Rev.3.0


Toshiba Electronic Components Datasheet

TDTC123J Datasheet

NPN Transistor

No Preview Available !

TDTC123J
5. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Input voltage (off)
Input voltage (on)
Output voltage
Input bias current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
6. Marking
Symbol
VI(off)
VI(on)
VO(on)
II
IO(off)
GI
R1
R2/R1
fT
Note
Test Condition
Min
VCC = 5 V, IO = 0.1 mA
VO = 0.3 V, IO = 5 mA
IO = 10 mA, II = 0.5 mA
VI = 5 V
VCC = 50 V, VI = 0 V
VO = 5 V, IO = 10 mA
VCE = 10 V, IE = -5 mA, f = 100MHz
1.1
80
1.54
17
Typ.
0.1
2.2
21
250
Max
0.5
0.3
3.6
500
2.86
26
Unit
V
V
V
mA
nA
k
MHz
©2016-2020
2
Toshiba Electronic Devices & Storage Corporation
2020-11-13
Rev.3.0


Part Number TDTC123J
Description NPN Transistor
Maker Toshiba
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TDTC123J Datasheet PDF






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