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TH58BVG3S0HBAI4 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

General Description

The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.

Key Features

  • Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 × 2 4224 × 8 4224 bytes (256K + 8K) bytes.
  • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read.
  • Mode control Serial input/output Command control.
  • Number of valid blocks Min 4016 blocks Max 4096 blocks.
  • Power supply VCC = 2.7V to 3.6V.
  • Access time Cell array.

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TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58BVG3S0HBAI4 is a single 3.3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks. The device has a 4224-byte static register which allows program and read data to be transferred between the register and the memory cell array in 4224-bytes increments. The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages). The TH58BVG3S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs.