TH58NVG3D4BTG00
Description
The TH58NVG3D4B is a single 3.3 V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 4096blocks.
Key Features
- Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read
- Number of valid blocks Max 4096 blocks Min 3936 blocks
- Power supply VCC = 2.7 V to 3.6 V
- Program/Erase Cycles 10000 Cycles (With 4bit/528Byte ECC)
- Access time Cell array to register 50 µs max Serial Read Cycle 50 ns min
- Program/Erase time Auto Page Program Auto Block Erase 800 µs/page typ. 3 ms/block typ
- Operating current Read (50 ns cycle) Program (avg.) Erase (avg.) Standby 10 mA typ. 10 mA typ. 10 mA typ. 100 µA max
