TH58NYG3S0HBAI4 e2prom equivalent, 8 gbit (1g x 8 bit) cmos nand e2prom.
* Organization
Memory cell array Register Page size Block size
x8 4352 128K 8 2 4352 8 4352 bytes (256K 16K) bytes
* Modes Read, Reset, Auto Page Prog.
such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.
The TH58NYG3S0HBAI4 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 256) bytes 64 pages 4096blocks. The device has two 4352-byte static registers which a.
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