TH58NYG3S0HBAI4 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Name: TH58NYG3S0HBAI4
SKU: TH58NYG3S0HBAI4-947382

Toshiba

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Datasheet Details

Part number	TH58NYG3S0HBAI4
Manufacturer	Toshiba
File Size	716.50 KB
Description	8 GBIT (1G x 8 BIT) CMOS NAND E2PROM
Datasheet	TH58NYG3S0HBAI4-Toshiba.pdf

TH58NYG3S0HBAI4 Product details

Description

The TH58NYG3S0HBAI4 is a single 1.8V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  256) bytes  64 pages  4096blocks.

Features

Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 4016 blocks Max 4096 blocks.
Power supply VCC  1.7V to 1.95V.
Access time Cell array to register 25 s max.

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Published: Oct 19, 2015 |