TH58NYG4S0FBAID - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

Name: TH58NYG4S0FBAID
SKU: TH58NYG4S0FBAID-947384

Toshiba

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Datasheet Details

Part number	TH58NYG4S0FBAID
Manufacturer	Toshiba
File Size	921.79 KB
Description	16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Datasheet	TH58NYG4S0FBAID-Toshiba.pdf

TH58NYG4S0FBAID Product details

Description

The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks.

Features

Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes.
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read.
Mode control Serial input/output Command control.
Number of valid blocks Min 8032 blocks Max 8192 blocks.
Power supply VCC = 1.7V to 1.95V.
Access time.

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Published: Oct 19, 2015 |