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TH58NYG4S0FBAID Datasheet, Toshiba

TH58NYG4S0FBAID e2prom equivalent, 16 gbit (2g x 8 bit) cmos nand e2prom.

TH58NYG4S0FBAID Avg. rating / M : 1.0 rating-12

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TH58NYG4S0FBAID Datasheet

Features and benefits


* Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes
* Modes Read, Reset, Auto.

Application

such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require h.

Description

The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which al.

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