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Toshiba Electronic Components Datasheet

THGBMDG5D1LBAIL Datasheet

e-MMC Module

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THGBMDG5D1LBAIL pdf
THGBMDG5D1LBAIL
4GB THGBMDG5D1LBAIL
TOSHIBA e-MMC Module
INTRODUCTION
THGBMDG5D1LBAIL is 4GB density of e-MMC Module product housed in 153 ball BGA package. This unit is utilized
advanced TOSHIBA NAND flash device(s) and controller chip assembled as Multi Chip Module. THGBMDG5D1LBAIL
has an industry standard MMC protocol for easy use.
FEATURES
THGBMDG5D1LBAIL Interface
THGBMDG5D1LBAIL has the JEDEC/MMCA Version 5.0 interface with 1-I/O, 4-I/O and 8-I/O mode.
Pin Connection
P-WFBGA153-1113-0.50 (11.5mm x 13mm, H0.8mm max. package)
14 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
13 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
12 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
11 NC NC NC
NC NC NC
10
NC NC NC
VSF VSF RFU Vss Vcc RFU
NC NC RFU
9
NC NC NC
VSF
Vcc NC NC NC
8
NC NC NC
RFU
Vss NC NC NC
Top View
7 RFU NC NC Vss
RFU
NC NC RFU
6
Vss DAT7 VccQ
Vcc
RFU
CLK NC VssQ
5
DAT2 DAT6 NC
RFU Vcc Vss DS Vss RST_n
CMD VssQ VccQ
4 DAT1 DAT5 VssQ NC index
VccQ VccQ VssQ
3 DAT0 DAT4 NC NC NC NC RFU NC NC NC NC NC NC VccQ
2 NC DAT3 VDDi NC NC NC NC NC NC NC NC NC VssQ NC
1 NC NC NC NC NC NC NC NC NC NC NC NC NC NC
ABCD E F GH JK LMN P
Pin Number Name Pin Number Name Pin Number Name
A3 DAT0 C2
VDDi
J5
Vss
A4
DAT1
C4
VssQ
J10
Vcc
A5 DAT2 C6 VccQ K5 RST_n
A6 Vss E6 Vcc K8 Vss
B2 DAT3 E7 Vss K9 Vcc
B3 DAT4 F5 Vcc M4 VccQ
B4 DAT5 G5 Vss M5 CMD
B5 DAT6 H5 DS M6 CLK
B6
DAT7
H10
Vss
N2 VssQ
NC: No Connect, shall be connected to ground or left floating.
RFU: Reserved for Future Use, shall be left floating for future use.
VSF: Vendor Specific Function, shall be left floating.
Pin Number
N4
N5
P3
P4
P5
P6
Name
VccQ
VssQ
VccQ
VssQ
VccQ
VssQ
1 Dec. 1st, 2015


Toshiba Electronic Components Datasheet

THGBMDG5D1LBAIL Datasheet

e-MMC Module

No Preview Available !

THGBMDG5D1LBAIL pdf
Part Numbers
Available e-MMC Module Products – Part Numbers
TOSHIBA Part Number
THGBMDG5D1LBAIL
Density
4GB
Package Size
11.5mm x 13mm x 0.8mm(max)
Operating Temperature and Humidity Conditions
-25°C to +85°C, and 0%RH to 95%RH non-condensing
THGBMDG5D1LBAIL
NAND Flash Type
1 x 32Gbit 15nm
Weight
0.18g typ
Storage Temperature and Humidity Conditions
-40°C to +85°C, and 0%RH to 95%RH non-condensing
Performance
X8 mode/ Sequential access
TOSHIBA Part Number Density
THGBMDG5D1LBAIL 4GB
NAND Flash Type
1 x 32Gbit 15nm
Interleave
Operation
Frequency
/Mode
52MHz/SDR
Non
Interleave
52MHz/DDR
HS200
HS400
VccQ
1.8V
3.3V
1.8V
3.3V
1.8V
1.8V
Typ. Performance
[MB/sec]
Read
46
46
88
88
152
152
Write
14
14
14
14
14
14
Power Supply
Vcc =
VccQ =
2.7V to 3.6V
1.7V to 1.95V / 2.7V to 3.6V
Operating Current (RMS)
The measurement for max RMS current is done as average RMS current consumption over a period of 100ms
TOSHIBA Part
Number
Density
NAND Flash Type
Interleave
Operation
Frequency
/Mode
VccQ
Max Operating
Current [mA]
Iccq
Icc
THGBMDG5D1LBAIL 4GB
1 x 32Gbit 15nm
Non
Interleave
52MHz/SDR
52MHz/DDR
HS200
HS400
1.8V
3.3V
1.8V
3.3V
1.8V
1.8V
60
70
70
85
90
100
25
25
30
30
30
30
2 Dec. 1st, 2015


Part Number THGBMDG5D1LBAIL
Description e-MMC Module
Maker Toshiba
Total Page 30 Pages
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