TJ11A10M3 mos equivalent, mosfets silicon p-channel mos.
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) Enhancement mode: Vth = -2.0 to .
* Switching Voltage Regulators
2. Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS.
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