TJ200F04M3L mosfet equivalent, silicon p-channel mosfet.
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.45 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhanceme.
* Automotive
* DC-DC Converters
* Motor Drivers
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-r.
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