TK110Z65Z - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK110Z65Z
Manufacturer	Toshiba
File Size	483.17 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK110Z65Z Datasheet
Additional preview pages of the TK110Z65Z datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.092 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 1.02 mA) 3. Packaging and Internal Circuit TK110Z65Z TO-247-4L(T) 1. Drain (heatsink) 2. Source 1 3. Source 2 4. Gate Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pin. 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specifi.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Dec 30, 2023 |