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TK11S10N1L Datasheet - Toshiba

TK11S10N1L Silicon N-channel MOSFET

TK11S10N1L Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink

TK11S10N1L Datasheet

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Datasheet Details

Part number:

TK11S10N1L

Manufacturer:

Toshiba ↗

File Size:

431.99 KB

Description:

Silicon n-channel mosfet.

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TK11S10N1L TK11S10N1L Silicon N-channel MOSFET Toshiba

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