TK12A50D5 - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK12A50D5
Manufacturer	Toshiba
File Size	300.58 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK12A50D5 Datasheet
Additional preview pages of the TK12A50D5 datasheet.

(1) Fast reverse recovery time: trrf = 50 ns (typ. ), trr = 120 ns (typ. ) (2) Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ. ) (3) High forward transfer admittance: |Yfs| = 9.0 S (typ. ) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK12A50D5 TO-220SIS 1: Gate 2: Drain 3: Source ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-06-19 Rev.3.0 TK12A50D5 4. Abs.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Dec 30, 2023 |