- Part: TK13A50D
- Description: Silicon N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Toshiba
- Size: 205.21 KB
Key Features
- Low drain-source ON resistance: RDS (ON) = 0.31 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 7.5 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)