TK190E65Z - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK190E65Z
Manufacturer	Toshiba
File Size	477.80 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK190E65Z Datasheet
Additional preview pages of the TK190E65Z datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.158 Ω (typ. ) (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190E65Z 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25.
unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Sin.

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Published: Jan 2, 2024 |