TK190U65Z - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK190U65Z
Manufacturer	Toshiba
File Size	484.38 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK190U65Z Datasheet
Additional preview pages of the TK190U65Z datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.149 Ω (typ. ) (2) High-speed switching properties with the lower capacitance. (3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.61 mA) 3. Packaging and Internal Circuit TK190U65Z TOLL 1: Gate 2: Source 2 3, 4, 5, 6, 7, 8: Source 1 9: Drain (heatsink) Notice: Only use source 2 pin for gate input signal return. Please make sure that the main current flows into the source 1 pins. 4. Absolute Maximum Ratings (Note) (Ta = 25.
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Published: Jan 2, 2024 |